Datasheet > PBSS9110AS,126

PBSS9110AS,126

更新时间： 2024-11-05 21:20:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	142K
描述
PBSS9110AS

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技术参数
数据手册

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PBSS9110AS,126 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

PBSS9110AS,126 数据手册

PBSS9110AS

100 V, 1 A PNP low V_CEsat(BISS) transistor

Rev. 03 — 21 November 2009

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsat(BISS) transistor in a SOT54 (SC-43/TO-92) plastic package.

1.2 Features

SOT54 package

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High efficiency leading to less heat generation

1.3 Applications

Major application segments:

Automotive 42 V power

Telecom infrastructure

Industrial

Peripheral driver:

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (relays, buzzers and motors)

DC-to-DC converter

1.4 Quick reference data

Table 1.

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

−100

−1

Unit

collector-emitter voltage

collector current (DC)

peak collector current

equivalent on-resistance

I_CM

−3

R_CEsat

320

mΩ

12 3 4 5 6 7...12

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