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PBSS9110S PDF预览

PBSS9110S

更新时间: 2024-11-05 15:47:31
品牌 Logo 应用领域
飞利浦 - PHILIPS /
页数 文件大小 规格书
12页 80K
描述
Transistor

PBSS9110S 技术参数

是否Rohs认证:符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:N最大集电极电流 (IC):1 A
最小直流电流增益 (hFE):125JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.83 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
标称过渡频率 (fT):100 MHzBase Number Matches:1

PBSS9110S 数据手册

 浏览型号PBSS9110S的Datasheet PDF文件第2页浏览型号PBSS9110S的Datasheet PDF文件第3页浏览型号PBSS9110S的Datasheet PDF文件第4页浏览型号PBSS9110S的Datasheet PDF文件第5页浏览型号PBSS9110S的Datasheet PDF文件第6页浏览型号PBSS9110S的Datasheet PDF文件第7页 
PBSS9110S  
100 V, 1 A PNP low VCEsat (BISS) transistor  
Rev. 02 — 10 August 2004  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat transistor in a SOT54 (SC-43/TO-92) plastic package.  
1.2 Features  
SOT54 package  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High efficiency leading to less heat generation.  
1.3 Applications  
Major application segments:  
Automotive 42 V power  
Telecom infrastructure  
Industrial.  
Peripheral driver:  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
Inductive load driver (e.g. relays, buzzers and motors).  
DC-to-DC converter.  
1.4 Quick reference data  
Table 1:  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
1  
Unit  
V
collector-emitter voltage  
collector current (DC)  
peak collector current  
equivalent on-resistance  
-
-
-
-
-
-
-
-
A
ICM  
3  
A
RCEsat  
320  
mΩ  
 
 
 
 
 

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