Datasheet > PBSS5360Z-Q

PBSS5360Z-Q

更新时间： 2024-11-15 11:10:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	255K
描述
60 V, 3 A PNP low VCEsat transistorProduction

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PBSS5360Z-Q 数据手册

PBSS5360Z-Q

60 V, 3 A PNP low VCEsat transistor

24 May 2022

Product data sheet

1. General description

PNP low V_CEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD)

plastic package.

NPN complement: PBSS4360Z

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High energy efficiency due to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

DC-to-DC conversion

Supply line switching

Battery charger

LCD backlighting

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-3

I_CM

peak collector current single pulse; t_p≤ 1 ms

-6

R_CEsat

collector-emitter

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

225

mΩ

saturation resistance

300 µs; δ ≤ 0.02; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

2, 4

collector

emitter

sym028

collector

SC-73 (SOT223)

12 3 4 5 6 7...11

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