Datasheet > PBSS5440D-Q

PBSS5440D-Q

更新时间： 2024-11-15 17:00:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	301K
描述
40 V, 4 A PNP low VCEsat transistorProduction

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PBSS5440D-Q 数据手册

PBSS5440D-Q

40 V, 4 A PNP low VCEsat transistor

26 September 2023

Product data sheet

1. General description

PNP low VCEsat single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.

NPN complement: PBSS4440D

2. Features and benefits

•

Ultra low collector-emitter saturation voltage VCEsat

•

4 A continuous collector current capability IC (DC)

Up to 15 A peak current

Very low collector-emitter saturation resistance

High efficiency due to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Power management functions

Charging circuits

DC-to-DC conversion

MOSFET gate driving

Power switches (e.g. motors, fans)

Thin Film Transistor (TFT) backlight inverter

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

[1]

-4

I_CM

peak collector current limited by T_j(max); single pulse; t_p= 1 ms

-15

R_CEsat

collector-emitter

saturation resistance

I_C= -6 A; I_B= -600 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

mΩ

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

12 3 4 5 6 7...14

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