Datasheet > PBSS5540X-Q

PBSS5540X-Q

更新时间： 2024-04-09 19:02:34

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	241K
描述
40 V, 5 A PNP low VCEsat transistorProduction

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PBSS5540X-Q 数据手册

PBSS5540X-Q

40 V, 5 A PNP low VCEsat transistor

23 January 2024

Product data sheet

1. General description

PNP low V_CEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted

Device(SMD) plastic package.

NPN complement: PBSS4540X-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability: I_Cand I_CM

High efficiency leading to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switching circuits

Battery management applications

DC/DC converter applications

Strobe flash units

Medium power driver (e.g. relays, buzzers and motors)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

-4

I_CM

peak collector current single pulse; t_p≤ 10 ms

-10

R_CEsat

collector-emitter

I_C= -5 A; I_B= -500 mA; pulsed; t_p≤

mΩ

saturation resistance

300 µs; δ ≤ 0.02; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

sym132

SOT89

12 3 4 5 6 7...13

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