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PBSS5420D-165 PDF预览

PBSS5420D-165

更新时间: 2024-11-14 14:35:15
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 116K
描述
TRANSISTOR,BJT,PNP,20V V(BR)CEO,4A I(C),SC-74

PBSS5420D-165 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.06最大集电极电流 (IC):4 A
配置:Single最小直流电流增益 (hFE):80
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):2.5 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

PBSS5420D-165 数据手册

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PBSS5420D  
20 V, 4 A PNP low VCEsat (BISS) transistor  
Rev. 01 — 7 April 2005  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD  
plastic package.  
NPN complement: PBSS4420D.  
1.2 Features  
Very low collector-emitter saturation resistance  
Ultra low collector-emitter saturation voltage  
4 A continuous collector current  
Up to 15 A peak current  
High efficiency leading to less heat generation  
1.3 Applications  
Power management functions  
Charging circuits  
DC-to-DC conversion  
MOSFET gate driving  
Power switches (e.g. motors, fans)  
TFT backlight inverter  
1.4 Quick reference data  
Table 1:  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
4  
Unit  
V
collector-emitter voltage  
collector current (DC)  
peak collector current  
open base  
-
-
-
-
-
-
[1]  
[2]  
A
ICM  
single pulse;  
tp 1 ms  
15  
A
RCEsat  
collector-emitter saturation IC = 4 A;  
resistance IB = 400 mA  
-
50  
70  
mΩ  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
[2] Pulse test: tp 300 µs; δ ≤ 0.02.  

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