Datasheet > PBSS5160T-Q

PBSS5160T-Q

更新时间： 2024-11-19 15:18:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	245K
描述
60 V, 1 A PNP low VCEsat transistorProduction

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PBSS5160T-Q 数据手册

PBSS5160T-Q

60 V, 1 A PNP low VCEsat transistor

4 October 2023

Product data sheet

1. General description

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4160T-Q

2. Features and benefits

•

Low collector-emitter saturation voltage VCEsat

•

High collector current capability IC and ICM

High efficiency due to less heat generation

Reduces Printed-Circuit Board (PCB) area required

Cost-effective replacement for medium power transistors BCP52 and BCX52

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Major application segments:

•

Automotive

Telecom infrastructure

Industrial

•

Power management:

•

JDC-to-DC conversion

Supply line switching

Peripheral driver:

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load drivers (e.g. relays, buzzers and motors)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

[1]

-1

I_CM

peak collector current limited by T_j(max); t_p= 1 ms

-2

R_CEsat

collector-emitter

saturation resistance

I_C= -1 A; I_B= -100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

220

330

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

12 3 4 5 6 7...11

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