Datasheet > PBSS5160U-Q

PBSS5160U-Q

更新时间： 2024-11-22 17:01:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	274K
描述
60 V, 1 A PNP low VCEsat transistorProduction

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PBSS5160U-Q 数据手册

PBSS5160U-Q

60 V, 1 A PNP low VCEsat transistor

9 November 2023

Product data sheet

1. General description

PNP low V_CEsattransistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High voltage DC-to-DC conversion

High voltage MOSFET gate driving

High voltage motor control

High voltage power switches (e.g. motors, fans)

Automotive applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

[1]

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

-2

R_CEsat

collector-emitter

saturation resistance

I_C= -1 A; I_B= -100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

255

340

mΩ

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

12 3 4 5 6 7...12

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