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PBSS5220T-Q PDF预览

PBSS5220T-Q

更新时间: 2024-11-22 11:14:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 229K
描述
20 V, 2 A PNP low VCEsat transistorProduction

PBSS5220T-Q 数据手册

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PBSS5220T-Q  
20 V, 2 A PNP low VCEsat transistor  
22 June 2022  
Product data sheet  
1. General description  
PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Low collector-emitter saturation voltage VCEsat  
High collector current capability: IC and ICM  
Higher efficiency leading to less heat generation  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
DC-to-DC conversion  
Supply line switching  
Battery charger  
LCD backlighting  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
Inductive load driver (e.g. relays, buzzers and motors)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-20  
V
IC  
collector current  
-
-
-
-
-
-
-2  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-3  
A
RCEsat  
collector-emitter  
IC = -2 A; IB = -200 mA; pulsed; tp ≤  
113  
mΩ  
saturation resistance  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
3
B
E
C
C
2
emitter  
B
3
collector  
E
1
2
sym013  
SOT23  
 
 
 
 
 

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