Datasheet > PBSS5230PAP

PBSS5230PAP

更新时间： 2024-11-18 12:32:51

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	274K
描述
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

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PBSS5230PAP 数据手册

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

11 January 2013

Product data sheet

1. General description

PNP/PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

High energy efficiency due to less heat generation

AEC-Q101 qualified

•

3. Applications

Load switch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-30

I_C

collector current

-2

-3

I_CM

peak collector current single pulse; t_p≤ 1 ms

Per transistor

R_CEsat

collector-emitter

I_C= -1 A; I_B= -0.1 A; pulsed;

195

mΩ

saturation resistance

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

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