生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.81 | 主体高度: | 12.55 mm |
主体长度或直径: | 5 mm | 通信标准: | SONET |
连接类型: | LC CONNECTOR | 最长下降时间: | 0.05 ns |
光纤设备类型: | DFB LASER DIODE EMITTER | 安装特点: | SURFACE MOUNT |
信道数量: | 1 | 最大工作波长: | 1330 nm |
最小工作波长: | 1290 nm | 标称工作波长: | 1310 nm |
上升时间: | 0.05 ns | 最大供电电压: | 2 V |
表面贴装: | YES | 传输类型: | DIGITAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8346TB | NEC |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TB | RENESAS |
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LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TB | CEL |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TB-AZ | CEL |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS | RENESAS |
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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS | NEC |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS-AZ | RENESAS |
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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY | NEC |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY-AZ | CEL |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349TB | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |