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NX8350T29 PDF预览

NX8350T29

更新时间: 2024-11-02 01:07:27
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
8页 276K
描述
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

NX8350T29 数据手册

 浏览型号NX8350T29的Datasheet PDF文件第2页浏览型号NX8350T29的Datasheet PDF文件第3页浏览型号NX8350T29的Datasheet PDF文件第4页浏览型号NX8350T29的Datasheet PDF文件第5页浏览型号NX8350T29的Datasheet PDF文件第6页浏览型号NX8350T29的Datasheet PDF文件第7页 
Preliminary  
NX8350TS  
LASER DIODE  
Data Sheet  
R08DS0025EJ0100  
Rev.1.00  
Sep 19, 2010  
1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION  
DESCRIPTION  
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package  
designed for CFP transceiver.  
FEATURES  
Internal optical isolator  
Peak emission wavelength  
Optical output power  
1 271/1 291/1 311/1 331 nm  
Pf = 2 dBm  
Ith = 8 mA TYP. @ TC = 25C  
TC = 5 to +85C  
Low threshold current  
Wide operating temperature range  
InGaAs monitor PIN-PD  
IEEE802.3ba compliant  
APPLICATIONS  
40 G BASE-LR4  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 1 of 7  

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