Datasheet > NX8503BG

NX8503BG

更新时间： 2024-09-26 22:44:47

品牌	Logo	应用领域
日电电子 - NEC		二极管激光二极管
页数	文件大小	规格书
5页	100K
描述
NECs 1550 nm InGaAsP MQW DFB LASER DIODE

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中文翻译

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数据手册

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NX8503BG 数据手册

NEC's 1550 nm

InGaAsP MQW DFB LASER DIODE

IN COAXIAL PACKAGE

NX8503BG-CC

NX8503CG-CC

FOR 155 Mb/s AND 622 Mb/s APPLICATIONS

FEATURES

DESCRIPTION

NEC's NX8503BG-CC and NX8503CG-CC are 1550 nm Co-

axial Module DFB (Distributed Feed-Back) laser diode with

single mode fiber. Multiple Quantum Well (MQW) structure is

adopted to achieve stable dynamic single longitudinal mode

operation over a wide temperature range of -10 to +85°C.

• PEAK EMISSION WAVELENGTH:

λP = 1550 nm

• OPTICAL OUTPUT POWER:

Pf = 2.0 mW

• LOW THRESHOLD CURRENT:

ITH = 15 mA @ TC = 25°C

The module is ideal as a light source for Synchronous Digital

Hierarchy (SDH) system, STM-1, log-haul L-1.2, L-1.3 and

STM-4, long-haul L-4.2, L-4.3 ITU-T recommendations.

• InGaAs MONITOR PIN-PD

• WIDE OPERATING TEMPERATURE RANGE:

TC = -10 to +85°C

• WITH SC-UPC CONNECTOR

• BASED ON TELCORDIA RELIABILITY

ELECTRO-OPTICAL CHARACTERISTICS (TC = -10 to +85°C, unless otherwise specified)

PART NUMBER

NX8300BG-CC, NX8300CG-CC

SYMBOLS

PARAMETERS AND CONDITIONS

Optical Output Power from Fiber, CW

Operating Voltage, Pf = 2.0 mW

UNITS

MIN

TYP

2.0

1.1

MAX

VOP

ITH

1.6

Threshold Current

TC = +25°C

PTH

Threshold Output Power, IF = ITH

µW

100

IMOD

Modulation Current

Pf = 2.0 mW, TC = 25°C

Pf = 2.0 mW

ηd

Differential Efficiency

Pf = 2.0 mW, TC = 25°C

Pf = 2.0 mW

W/A

0.050

0.030

0.080

-1.6

0.130

0.150

∆ηd

Temperature Dependence of Differential Efficiency,

(@ T °C)

(@ 25 °C)

-3

∆ηd = 10 log

Kink

Kink, Pf = Up to 2.4 mW (Refer to defenitions)

Peak Emission Wavelength, Pf = 2.0 mW

±20

1570

0.12

1.0

λp

1530

1550

0.1

0.3

∆λ/∆T

Temperature Dependence of Peak Emission Wavelength nm/°C

∆λ

Spectral Width, Pf = 2.0 mW, -20 dB down width

Side Mode Suppression Ratio, Pf = 2.0 mW

Cut-off Frequency, -3 dB, VR = 5 V, Pf = 2.0 mW

Rise Time, 10 to 90%, Ppk = 2.0 mW, IF = ITH

Fall Time, 90 to 10%, Ppk = 2.0 mW, IF = ITH

Monitor Current, VR = 5 V, Pf = 2.0 mW

SMSR

GHz

2.0

0.5

µA

200

1000

2000

Monitor Dark Current

VR = 5 V, TC = 25 °C

1.0

500

VR = 5 V

continued next page

California Eastern Laboratories

12 3 4 5

中文翻译

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与NX8503BG相关器件

型号	品牌	获取价格	描述	数据表
NX8503BG-CC	NEC	获取价格	NECs 1550 nm InGaAsP MQW DFB LASER DIODE
NX8503CG	NEC	获取价格	NECs 1550 nm InGaAsP MQW DFB LASER DIODE
NX8503CG-CC	NEC	获取价格	NECs 1550 nm InGaAsP MQW DFB LASER DIODE
NX8504BE-CC	CEL	获取价格	1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
NX8504CE-CC	CEL	获取价格	1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
NX8508	CEL	获取价格	NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
NX8508BM47-CC	CEL	获取价格	NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
NX8508BM47-CC-A	RENESAS	获取价格	LASER DIODE W/MONITOR,1.47UM PEAK WAVELENGTH,FOM-SC
NX8508BM47-CC-AZ	RENESAS	获取价格	LASER DIODE W/MONITOR,1.47UM PEAK WAVELENGTH,FOM-SC
NX8508BM47-CC-AZ	CEL	获取价格	NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

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