是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | Reach Compliance Code: | compliant |
风险等级: | 5.26 | 主体高度: | 14.25 mm |
主体长度或直径: | 2.97 mm | 内置特性: | ISOLATOR |
通信标准: | OC-192, SONET | 数据速率: | 10000 Mbps |
最长下降时间: | 0.05 ns | 光纤设备类型: | DFB LASER DIODE EMITTER |
JESD-609代码: | e0 | 安装特点: | THROUGH HOLE MOUNT |
信道数量: | 1 | 最大工作波长: | 1330 nm |
最小工作波长: | 1290 nm | 标称工作波长: | 1310 nm |
上升时间: | 0.05 ns | 电源电流: | 120 mA |
最大供电电压: | 2.2 V | 最小供电电压: | 0.5 V |
标称供电电压: | 1.4 V | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 最小阈值电流: | 8 mA |
传输类型: | DIGITAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8346TB-AZ | CEL |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS | RENESAS |
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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS | NEC |
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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TS-AZ | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY | NEC |
获取价格 |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY-AZ | CEL |
获取价格 |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349TB | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349TS | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349XK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349YK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |