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NX8346TB PDF预览

NX8346TB

更新时间: 2024-11-13 06:00:39
品牌 Logo 应用领域
日电电子 - NEC 光纤二极管激光二极管监视器通信
页数 文件大小 规格书
9页 96K
描述
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:TransferredReach Compliance Code:compliant
风险等级:5.26主体高度:14.25 mm
主体长度或直径:2.97 mm内置特性:ISOLATOR
通信标准:OC-192, SONET数据速率:10000 Mbps
最长下降时间:0.05 ns光纤设备类型:DFB LASER DIODE EMITTER
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
信道数量:1最大工作波长:1330 nm
最小工作波长:1290 nm标称工作波长:1310 nm
上升时间:0.05 ns电源电流:120 mA
最大供电电压:2.2 V最小供电电压:0.5 V
标称供电电压:1.4 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)最小阈值电流:8 mA
传输类型:DIGITALBase Number Matches:1

NX8346TB 数据手册

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DATA SHEET  
LASER DIODE  
NX8346TB,NX8346TY  
1 310 nm AlGaInAs MQW-DFB LASER DIODE  
FOR 10 Gb/s APPLICATION  
DESCRIPTION  
The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells  
(MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter  
optical subassembly) with InGaAs monitor PIN-PD in a receptacle type  
package designed for SFP+/XFP transceiver.  
APPLICATIONS  
10 G BASE-LW/LR  
10 G Fibre Channel  
SONET OC-192  
FEATURES  
Internal optical isolator  
Optical output power  
Pf = 2 dBm  
Low threshold current  
lth = 8 mA TYP. @ TC = 25°C  
TC = 20 to +95°C  
Wide operating temperature range  
InGaAs monitor PIN-PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PL10722EJ01V0DS (1st edition)  
Date Published July 2008 NS  
Printed in Japan  
2008  

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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION