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NX8346TS PDF预览

NX8346TS

更新时间: 2024-02-13 05:06:31
品牌 Logo 应用领域
瑞萨 - RENESAS 光纤二极管激光二极管
页数 文件大小 规格书
9页 165K
描述
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最大正向电流:0.12 A最大正向电压:2.2 V
安装特点:THROUGH HOLE MOUNT最高工作温度:95 °C
最低工作温度:-40 °C光电设备类型:LASER DIODE
峰值波长:1310 nm最长响应时间:5e-11 s
半导体材料:AlGaInAs子类别:Laser Diodes
表面贴装:NO

NX8346TS 数据手册

 浏览型号NX8346TS的Datasheet PDF文件第2页浏览型号NX8346TS的Datasheet PDF文件第3页浏览型号NX8346TS的Datasheet PDF文件第4页浏览型号NX8346TS的Datasheet PDF文件第5页浏览型号NX8346TS的Datasheet PDF文件第6页浏览型号NX8346TS的Datasheet PDF文件第7页 
Preliminary Data Sheet  
NX8346TS  
LASER DIODE  
R08DS0035EJ0200  
Rev.2.00  
Jan 21, 2011  
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION  
DESCRIPTION  
The NX8346TS is a 1 310 nm Multiple Quantum Well (MQW) structured  
Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical  
subassembly) with InGaAs monitor PIN-PD in a receptacle type package  
designed for SFP+/XFP transceiver.  
APPLICATIONS  
10 G BASE-LW/LR  
10 G Fibre Channel  
FEATURES  
Internal optical isolator  
Optical output power  
Pf = 3 dBm  
Low threshold current  
lth = 8 mA TYP. @ TC = 25°C  
TC = 5 to +95°C  
Wide operating temperature range  
InGaAs monitor PIN-PD  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R08DS0035EJ0200 Rev.2.00  
Jan 21, 2011  
Page 1 of 7  

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