是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.26 | Is Samacsys: | N |
内置特性: | PIN PHOTODIODE | 连接类型: | LC CONNECTOR |
数据速率: | 10000 Mbps | 最长下降时间: | 0.05 ns |
光纤设备类型: | DFB LASER DIODE EMITTER | JESD-609代码: | e0 |
安装特点: | THROUGH HOLE MOUNT | 最大工作波长: | 1355 nm |
最小工作波长: | 1260 nm | 标称工作波长: | 1308 nm |
上升时间: | 0.05 ns | 最大供电电压: | 2.2 V |
最小供电电压: | 0.5 V | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 最小阈值电流: | 8 mA |
传输类型: | DIGITAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8346TS-AZ | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY | NEC |
获取价格 |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8346TY-AZ | CEL |
获取价格 |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349TB | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349TS | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349XK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8349YK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |
NX8350T27 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION | |
NX8350T29 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION | |
NX8350T31 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |