是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大正向电流: | 0.12 A | 最大正向电压: | 2.2 V |
安装特点: | THROUGH HOLE MOUNT | 最高工作温度: | 95 °C |
最低工作温度: | -40 °C | 光电设备类型: | LASER DIODE |
峰值波长: | 1310 nm | 最长响应时间: | 5e-11 s |
半导体材料: | AlGaInAs | 子类别: | Laser Diodes |
表面贴装: | NO |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8346TY-AZ | CEL |
获取价格 |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
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NX8349TB | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
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NX8349TS | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
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NX8349XK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
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NX8349YK | RENESAS |
获取价格 |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
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NX8350T27 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |
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NX8350T29 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |
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NX8350T31 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |
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NX8350T33 | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |
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NX8350TS | CEL |
获取价格 |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION |
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