Datasheet > NX8349TB

NX8349TB

更新时间： 2024-01-07 01:02:40

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管激光二极管
页数	文件大小	规格书
9页	211K
描述
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8349TB 数据手册

Preliminary Data Sheet

NX8349TB

LASER DIODE

R08DS0001EJ0100

Rev.1.00

Jul 26, 2010

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION

The NX8349TB is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode

TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for

SFP+/XFP transceiver.

FEATURES

•

Internal optical isolator

Optical output power

Low threshold current

Wide operating temperature range

InGaAs monitor PIN-PD

P_f= −2 dBm

I_th= 8 mA TYP. @ T_C= 25°C

T_C= −20 to +95°C

APPLICATIONS

•

10 G BASE-LW/LR

10 G Fibre Channel

SONET OC-192

R08DS0001EJ0100 Rev.1.00

Jul 26, 2010

Page 1 of 7

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型号	品牌	获取价格	描述	数据表
NX8349TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349XK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8350T27	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T29	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T31	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T33	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350TS	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350TS	RENESAS	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8369TB	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION