Datasheet > NX8349XK

NX8349XK

更新时间： 2024-02-15 11:43:48

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管激光二极管
页数	文件大小	规格书
11页	227K
描述
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8349XK 数据手册

Preliminary Data Sheet

NX8349TS,NX8349YK,NX8349XK

R08DS0002EJ0100

Rev.1.00

LASER DIODE

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Jul 26, 2010

DESCRIPTION

The NX8349TS, NX8349YK, NX8349XK are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed

Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle

type package designed for SFP+/XFP transceiver.

FEATURES

•

Internal optical isolator

Optical output power

Low threshold current

Wide operating temperature range

InGaAs monitor PIN-PD

P_f= −3 dBm

I_th= 8 mA TYP. @ T_C= 25°C

T_C= −5 to +95°C

APPLICATIONS

•

10 G BASE-LW/LR

10 G Fibre Channel

R08DS0002EJ0100 Rev.1.00

Jul 26, 2010

Page 1 of 9

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型号	品牌	获取价格	描述	数据表
NX8349YK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8350T27	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T29	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T31	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T33	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350TS	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350TS	RENESAS	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8369TB	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8501	NEC	获取价格	1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE