Datasheet > NX8346TB-AZ

NX8346TB-AZ

更新时间： 2024-11-02 01:21:03

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
9页	205K
描述
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8346TB-AZ 数据手册

LASER DIODE

NX8346TB,NX8346TY

1 310 nm AlGaInAs MQW-DFB LASER DIODE

FOR 10 Gb/s APPLICATION

DESCRIPTION

The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells

(MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter

optical subassembly) with InGaAs monitor PIN-PD in a receptacle type

package designed for SFP+/XFP transceiver.

APPLICATIONS

•

10 G BASE-LW/LR

10 G Fibre Channel

SONET OC-192

FEATURES

•

Internal optical isolator

Optical output power

P^f= −2 dBm

Low threshold current

l^th= 8 mA TYP. @ TC = 25°C

T^C= −20 to +95°C

Wide operating temperature range

InGaAs monitor PIN-PD

Document No. PL10722EJ01V0DS (1st edition)

Date Published July 2008 NS

2008

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
NX8346TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS-AZ	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY-AZ	CEL	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349XK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8350T27	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION