NX8346TS-AZ

更新时间： 2024-01-20 14:08:31

品牌	Logo	应用领域
瑞萨 - RENESAS		光纤二极管激光二极管监视器通信
页数	文件大小	规格书
10页	178K
描述
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8346TS-AZ 技术参数

Preliminary Data Sheet

NX8346TB, NX8346TY

LASER DIODE

R08DS0032EJ0200

Rev.2.00

Dec 18, 2010

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION

The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells (MQW)

structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

subassembly) with InGaAs monitor PIN-PD in a receptacle type package

designed for SFP+/XFP transceiver.

APPLICATIONS

•

10 G BASE-LW/LR

10 G Fibre Channel

SONET OC-192

FEATURES

•

Internal optical isolator

Optical output power

P^f= −2 dBm

Low threshold current

l^th= 8 mA TYP. @ TC = 25°C

T^C= −20 to +95°C

Wide operating temperature range

InGaAs monitor PIN-PD

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R08DS0032EJ0200 Rev.2.00

Dec 18, 2010

Page 1 of 8

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
NX8346TY	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY-AZ	CEL	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349XK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8350T27	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T29	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T31	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T33	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION