NX8346TS

更新时间： 2024-09-26 06:00:39

品牌	Logo	应用领域
日电电子 - NEC		二极管激光二极管
页数	文件大小	规格书
8页	83K
描述
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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NX8346TS 数据手册

DATA SHEET

LASER DIODE

NX8346TS

1 310 nm AlGaInAs MQW-DFB LASER DIODE

FOR 10 Gb/s APPLICATION

DESCRIPTION

The NX8346TS is a 1 310 nm Multiple Quantum Well (MQW) structured

Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

subassembly) with InGaAs monitor PIN-PD in a receptacle type package

designed for SFP+/XFP transceiver.

APPLICATIONS

•

10 G BASE-LW/LR

10 G Fibre Channel

FEATURES

•

Internal optical isolator

Optical output power

P^f= −3 dBm

Low threshold current

l^th= 8 mA TYP. @ TC = 25°C

T^C= −5 to +95°C

Wide operating temperature range

InGaAs monitor PIN-PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PL10723EJ01V0DS (1st edition)

Date Published July 2008 NS

Printed in Japan

2008

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
NX8346TS-AZ	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY-AZ	CEL	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349XK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349YK	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8350T27	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T29	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8350T31	CEL	获取价格	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION