Datasheet > NVMFS5830NL_13

NVMFS5830NL_13

更新时间： 2022-02-26 13:53:46

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	111K
描述
Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel

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NVMFS5830NL_13 数据手册

NVMFS5830NL

TYPICAL CHARACTERISTICS

8000

7000

6000

5000

4000

3000

2000

1000

= 0 V

T = 25°C

iss

oss

= 32 A

= 60 A

rss

T = 25°C

10 20 30 40 50 60 70 80 90 100 110 120

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

1000

100

175

150

125

100

= 0 V

= 20 V

= 10 A

= 4.5 V

T = 25°C

d(off)

d(on)

R , GATE RESISTANCE (W)

100

0.60

0.65

0.70

, SOURCE−TO−DRAIN VOLTAGE (V)

0.75

0.80

0.85

0.90 0.95

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

100

10 ms

100 ms

1 ms

10 ms

= 10 V

0.1

Single Pulse

= 25°C

Limit

DS(on)

Thermal Limit

Package Limit

0.01

0.1

100

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

http://onsemi.com

1 2 345 6

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