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NTS4001NT3G PDF预览

NTS4001NT3G

更新时间: 2023-06-19 14:32:20
品牌 Logo 应用领域
安森美 - ONSEMI 小信号场效应晶体管
页数 文件大小 规格书
6页 49K
描述
单 N 沟道小信号 MOSFET 30V,270mA,1.5Ω

NTS4001NT3G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.27 A
最大漏极电流 (ID):0.27 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):12 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTS4001NT3G 数据手册

 浏览型号NTS4001NT3G的Datasheet PDF文件第2页浏览型号NTS4001NT3G的Datasheet PDF文件第3页浏览型号NTS4001NT3G的Datasheet PDF文件第4页浏览型号NTS4001NT3G的Datasheet PDF文件第5页浏览型号NTS4001NT3G的Datasheet PDF文件第6页 
NTS4001N  
Small Signal MOSFET  
30 V, 270 mA, Single N−Channel, SC−70  
Features  
Low Gate Charge for Fast Switching  
Small Footprint − 30% Smaller than TSOP−6  
ESD Protected Gate  
http://onsemi.com  
V
R
TYP  
I Max  
D
(BR)DSS  
DS(on)  
Pb−Free Package for Green Manufacturing (G Suffix)  
1.0 W @ 4.0 V  
1.5 W @ 2.5 V  
Applications  
270 mA  
30 V  
Low Side Load Switch  
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC  
Buck Converters  
Level Shifts  
SC−70  
SOT−323 (3 LEADS)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Gate  
1
2
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
V
DSS  
30  
V
V
3
Drain  
Gate−to−Source Voltage  
V
GS  
±20  
270  
200  
330  
Continuous Drain  
Current (Note 1)  
Steady T = 25 °C  
I
D
mA  
A
State  
Source  
T = 85 °C  
A
Power Dissipation  
(Note 1)  
Steady T = 25 °C  
State  
P
D
mW  
A
Top View  
Pulsed Drain Current  
t =10 µs  
I
200  
mA  
DM  
MARKING DIAGRAM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
150  
°C  
J
STG  
3
Source Current (Body Diode)  
I
270  
260  
mA  
S
1
TDW  
2
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
SC−70 / SOT−323  
CASE 419  
1. Surface mounted on FR4 board using 1 in sq. pad size  
(Cu area = 1.127 in sq. [1 oz] including traces).  
TD  
W
= Device Code  
= Work Week  
STYLE 8  
PIN ASSIGNMENT  
1
Gate  
Drain  
3
Source  
2
Top View  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTS4001NT1  
SC−70  
3000 Units/Reel  
3000 Units/Reel  
SC−70  
(Pb−Free)  
NTS4001NT1G  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
September, 2003 − Rev. 1  
NTS4001N/D  

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