Datasheet > NTS4101P

NTS4101P

更新时间： 2024-01-01 00:56:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	128K
描述
Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70

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中文翻译

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数据手册

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NTS4101P 数据手册

NTS4101P

Power MOSFET

−20 V, −1.37 A, Single P−Channel, SC−70

Features

• Leading −20 V Trench for Low R

http://onsemi.com

DS(on)

• −2.5 V Rated for Low Voltage Gate Drive

• SC−70 Surface Mount for Small Footprint (2x2 mm)

• Pb−Free Package is Available

Typ

I Max

(BR)DSS

DS(on)

83 mW @ −4.5 V

88 mW @ −3.6 V

−20 V

−1.37 A

Applications

104 mW @ −2.5 V

• High Side Load Switch

• Charging Circuit

• Single Cell Battery Applications such as: Cell Phones,

P−Channel MOSFET

Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

−20

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

−1.37

−0.62

0.329

T = 70°C

Power Dissipation

(Note 1)

Steady T = 25°C

State

MARKING DIAGRAM &

PIN ASSIGNMENT

Pulsed Drain Current

t = 10 ms

−4.0

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

TT M G

Source Current (Body Diode), Continuous

−0.5

SC−70/SOT−323

CASE 419

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

STYLE 8

THERMAL RESISTANCE RATINGS

Parameter

= Device Code

= Date Code*

= Pb−Free Package

Symbol

Max

Units

Junction−to−Ambient – Steady State (Note 1)

380

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

(Cu area = 1.127 in sq [1 oz] including traces).

ORDERING INFORMATION

†

Device

Package

Shipping

NTS4101PT1

SOT−323

3000/Tape & Reel

SOT−323

(Pb−Free)

NTS4101PT1G

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

March, 2006 − Rev. 2

NTS4101P/D

12 3 4 5

中文翻译

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与NTS4101P相关器件

型号	品牌	获取价格	描述	数据表
NTS4101P_06	ONSEMI	获取价格	Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1	ONSEMI	获取价格	Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1	ROCHESTER	获取价格	1370mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN
NTS4101PT1G	ONSEMI	获取价格	Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1G	ROCHESTER	获取价格	1370mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419-04, SC-70, 3 PIN
NTS4172N	ONSEMI	获取价格	Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70
NTS4172NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70
NTS4173P	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4173PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4401NT1	ONSEMI	获取价格	100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN

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