Datasheet > NTS4172N

NTS4172N

更新时间： 2024-11-20 12:19:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	107K
描述
Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70

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中文翻译

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NTS4172N 数据手册

NTS4172N

Power MOSFET

30 V, 1.7 A, Single N−Channel, SC−70

Features

• Low On−Resistance

• Low Gate Threshold Voltage

• Halide Free

http://onsemi.com

• This is a Pb−Free Device

MAX

I MAX

(BR)DSS

DS(on)

93 mW @ 10 V

100 mW @ 4.5 V

140 mW @ 2.5 V

1.7 A

1.5 A

1.0 A

Applications

• Low Side Load Switch

30 V

• DC−DC Converters (Buck and Boost Circuits)

• Optimized for Battery and Load Management Applications in

Portable Equipment like Cell Phones, PDA’s, Media Players, etc.

SC−70/SOT−323 (3 LEADS)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

1.6

Steady

State

T = 85°C

1.13

1.70

0.294

t ≤ 5 s

T = 25°C

MARKING DIAGRAM/

PIN ASSIGNMENT

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t ≤ 5 s

0.350

3.4

3 Drain

Pulsed Drain Current

t = 10 ms

TFMG

SC−70/SOT−323

CASE 419

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Gate

STYLE 8

Source

Source Current (Body Diode)

0.25

260

= Specific Device Code

= Date Code*

= Pb−Free Package

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

THERMAL RESISTANCE RATINGS

†

Parameter

Symbol

Max

425

360

Unit

Device

Package

Shipping

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 5 s (Note 1)

°C/W

NTS4172NT1G

SC−70

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces)

* Date code orientation may vary depending upon

manufacturing location

Publication Order Number:

June, 2008 − Rev. 0

NTS4172N/D

12 3 4 5

中文翻译

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与NTS4172N相关器件

型号	品牌	获取价格	描述	数据表
NTS4172NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70
NTS4173P	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4173PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4401NT1	ONSEMI	获取价格	100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN
NTS4409N	ONSEMI	获取价格	Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT
NTS4409NT1G	ONSEMI	获取价格	Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT
NTS-450	MEANWELL	获取价格	450W High Reliable True Sine Wave DC-AC Power Inverter
NTS-450-112GFCI	MEANWELL	获取价格	450W High Reliable True Sine Wave DC-AC Power Inverter
NTS-450-112UN	MEANWELL	获取价格	450W High Reliable True Sine Wave DC-AC Power Inverter
NTS-450-112US	MEANWELL	获取价格	450W High Reliable True Sine Wave DC-AC Power Inverter

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