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NTS4172NT1G PDF预览

NTS4172NT1G

更新时间： 2024-11-24 12:19:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 107K
描述
Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70

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NTS4172NT1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SC-70包装说明：LEAD FREE, CASE 419-04, SC-70, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.34
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：1.6 A
最大漏源导通电阻：0.093 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTS4172NT1G 数据手册

 浏览型号NTS4172NT1G的Datasheet PDF文件第2页浏览型号NTS4172NT1G的Datasheet PDF文件第3页浏览型号NTS4172NT1G的Datasheet PDF文件第4页浏览型号NTS4172NT1G的Datasheet PDF文件第5页 
NTS4172N  
Power MOSFET  
30 V, 1.7 A, Single N−Channel, SC−70  
Features  
• Low On−Resistance  
• Low Gate Threshold Voltage  
• Halide Free  
http://onsemi.com  
• This is a Pb−Free Device  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
93 mW @ 10 V  
100 mW @ 4.5 V  
140 mW @ 2.5 V  
1.7 A  
1.5 A  
1.0 A  
Applications  
• Low Side Load Switch  
30 V  
• DC−DC Converters (Buck and Boost Circuits)  
• Optimized for Battery and Load Management Applications in  
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.  
SC−70/SOT−323 (3 LEADS)  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
DSS  
30  
12  
G
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current (Note 1)  
T = 25°C  
1.6  
A
Steady  
State  
S
T = 85°C  
A
1.13  
1.70  
0.294  
I
A
D
t ≤ 5 s  
T = 25°C  
A
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Power Dissipation  
(Note 1)  
Steady  
State  
3
T = 25°C  
A
P
W
D
1
t ≤ 5 s  
0.350  
3.4  
3 Drain  
2
Pulsed Drain Current  
t = 10 ms  
I
A
p
DM  
TFMG  
SC−70/SOT−323  
CASE 419  
G
Operating Junction and Storage Temperature  
T ,  
T
stg  
−55 to  
150  
J
°C  
1
Gate  
2
STYLE 8  
Source  
Source Current (Body Diode)  
I
0.25  
260  
A
S
TF  
M
G
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
°C  
L
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
THERMAL RESISTANCE RATINGS  
†
Parameter  
Symbol  
Max  
425  
360  
Unit  
Device  
Package  
Shipping  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t ≤ 5 s (Note 1)  
R
°C/W  
NTS4172NT1G  
SC−70  
(Pb−Free)  
3000/Tape & Reel  
q
JA  
R
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces)  
* Date code orientation may vary depending upon  
manufacturing location  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
June, 2008 − Rev. 0  
NTS4172N/D  
 
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NTS4172NT1G 替代型号

型号 品牌 替代类型 描述 数据表
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