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NTS4401NT1 PDF预览

NTS4401NT1

更新时间: 2024-11-20 21:18:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
4页 36K
描述
100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN

NTS4401NT1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:30 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:2.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTS4401NT1 数据手册

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NTS4401NT1  
Product Preview  
Power MOSFET  
30 V, N-Channel, ESD Protected, SC-70  
Single  
This new device from ON Semiconductor was designed using  
proprietary leading edge planar technology to provide great electrical  
performance in a small package. This device takes advantage of the  
industry standard SC-70 (3-leads) package to increase board density  
and facilitate system integration.  
Its low figure of merit is particularly suited for high speed switching  
or load switching applications in single or dual cell Li-Ion battery  
supplied devices such as cell phones, media players, video games,  
digital cameras, PDA’s, etc.  
http://onsemi.com  
VBR(DSS) = 30 VOLTS  
RDS(on) (max) = 2.7 W @  
VGS = 4.5 V, ID = 10 mA  
DS(on) (max) = 4.0 W @  
VGS = 2.5 V, ID = 1.0 mA  
R
Features & Benefits  
Small Footprint: 45% Smaller than TSOP-6  
ESD Protected Gate  
SOT-323 (N-Channel)  
SC-70 (3-LEADS)  
SC-70-3 Package Provides Excellent Thermal Performance  
Low Voltage Drive (2.5 V) to Facilitate Drive Circuit Design  
Low Gate Charge for Fast Switching  
G
S
1
2
ESD HBM Level IB, MM Class A  
Minimum Breakdown Voltage Rating of 30 V  
Surface Mount SC-70 Package Saves Board Space  
Lead Free Package to Facilitate “Green Manufacturing” Compliance  
3
D
Applications  
Top View  
Level Shifter  
Load Switch  
Power Management  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current  
Symbol  
Value  
30  
Unit  
V
1
1
2
Gate  
2
V
DSS  
3
Drain  
V
GS  
±20  
V
SC-70  
CASE 419  
STYLE 8  
Source  
mA  
- Continuous @ T = 25°C (Note 1)  
I
D
100  
200  
A
Top View  
- Pulsed Drain Current (t = 10 µs) (Note 2)  
I
DM  
Steady State Power Dissipation  
P
D
200  
mW  
N1  
W
= Specific Device Code  
= Work Week  
@ T = 25°C (Note 1)  
A
Operating Junction and Storage Temperature  
Range  
T , T  
-55 to  
150  
°C  
J
stg  
Continuous Source Current (Body Diode)  
I
100  
260  
mA  
ORDERING INFORMATION  
S
Lead Temperature for Soldering Purposes  
(1/8from case for 10 seconds)  
T
°C  
L
Device  
NTS4401NT1  
Package  
Shipping  
3000/Tape & Reel  
SC-70  
1. Surface-mounted on FR4 board using 1sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces)  
2. Surface-mounted on FR4 board using the minimum recommended pad size  
(Cu area = TBD in sq)  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
April, 2003 - Rev. 0  
NTS4401NT1/D  

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