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NTS4409NT1G

更新时间： 2024-01-15 01:50:02
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 61K
描述
Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323

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NTS4409NT1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-70
包装说明：ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.37
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (ID)：0.7 A最大漏源导通电阻：0.35 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：12 pF
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：COMMERCIAL
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTS4409NT1G 数据手册

 浏览型号NTS4409NT1G的Datasheet PDF文件第2页浏览型号NTS4409NT1G的Datasheet PDF文件第3页浏览型号NTS4409NT1G的Datasheet PDF文件第4页浏览型号NTS4409NT1G的Datasheet PDF文件第5页浏览型号NTS4409NT1G的Datasheet PDF文件第6页 
NTS4409N  
Small Signal MOSFET  
25 V, 0.75 A, Single, N−Channel,  
ESD Protection, SC−70/SOT−323  
Features  
http://onsemi.com  
• Advance Planar Technology for Fast Switching, Low R  
• Higher Efficiency Extending Battery Life  
• This is a Pb−Free Device  
DS(on)  
V
R
DS(on)  
Typ  
I Max  
D
(BR)DSS  
249 mW @ 4.5 V  
299 mW @ 2.7 V  
25 V  
0.75 A  
Applications  
• Boost and Buck Converter  
• Load Switch  
• Battery Protection  
SC−70 (3−Leads)  
Gate  
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
3
Drain  
V
25  
"8.0  
0.75  
0.7  
V
V
A
A
DSS  
Gate−to−Source Voltage  
Drain Current  
V
GS  
t < 5 s T = 25°C  
I
A
D
D
Source  
Continuous Drain Current  
(Note 1)  
T = 25°C  
A
I
Steady  
Top View  
State  
T = 75°C  
A
0.6  
Power Dissipation (Note 1)  
Power Dissipation (Note 1)  
Pulsed Drain Current  
Steady State  
P
P
0.28  
0.33  
3.0  
W
W
A
D
D
MARKING DIAGRAM &  
PIN ASSIGNMENT  
t v 5 s  
3
t = 10 ms  
p
I
DM  
3
Drain  
Operating Junction and Storage Temperature  
T ,  
−55 to  
+150  
°C  
J
1
T
STG  
2
Source Current (Body Diode) (Note 1)  
I
0.3  
A
T4 WG  
S
SC−70/SOT−323  
CASE 419  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
260  
°C  
T
L
STYLE 8  
1
Gate  
2
ESD Rating − Machine Model  
250  
V
Source  
THERMAL RESISTANCE RATINGS  
Rating  
T4  
W
G
= Device Code  
= Work Week  
= Pb−Free Package  
Symbol  
Max  
450  
375  
Unit  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient − t v 5 s (Note 1)  
R
q
°C/W  
JA  
JA  
(Note: Microdot may be in either location)  
R
q
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NTS4409NT1G  
SOT−323  
(Pb−Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
NTS4409N/D  
 
123456

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