Datasheet > NTS4101P_06

NTS4101P_06

更新时间： 2024-11-20 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	128K
描述
Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTS4101P_06 数据手册

NTS4101P

Power MOSFET

−20 V, −1.37 A, Single P−Channel, SC−70

Features

• Leading −20 V Trench for Low R

http://onsemi.com

DS(on)

• −2.5 V Rated for Low Voltage Gate Drive

• SC−70 Surface Mount for Small Footprint (2x2 mm)

• Pb−Free Package is Available

Typ

I Max

(BR)DSS

DS(on)

83 mW @ −4.5 V

88 mW @ −3.6 V

−20 V

−1.37 A

Applications

104 mW @ −2.5 V

• High Side Load Switch

• Charging Circuit

• Single Cell Battery Applications such as: Cell Phones,

P−Channel MOSFET

Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

−20

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

−1.37

−0.62

0.329

T = 70°C

Power Dissipation

(Note 1)

Steady T = 25°C

State

MARKING DIAGRAM &

PIN ASSIGNMENT

Pulsed Drain Current

t = 10 ms

−4.0

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

TT M G

Source Current (Body Diode), Continuous

−0.5

SC−70/SOT−323

CASE 419

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

STYLE 8

THERMAL RESISTANCE RATINGS

Parameter

= Device Code

= Date Code*

= Pb−Free Package

Symbol

Max

Units

Junction−to−Ambient – Steady State (Note 1)

380

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

(Cu area = 1.127 in sq [1 oz] including traces).

ORDERING INFORMATION

†

Device

Package

Shipping

NTS4101PT1

SOT−323

3000/Tape & Reel

SOT−323

(Pb−Free)

NTS4101PT1G

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

March, 2006 − Rev. 2

NTS4101P/D

12 3 4 5

中文翻译

下载PDF

与NTS4101P_06相关器件

型号	品牌	获取价格	描述	数据表
NTS4101PT1	ONSEMI	获取价格	Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1	ROCHESTER	获取价格	1370mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN
NTS4101PT1G	ONSEMI	获取价格	Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1G	ROCHESTER	获取价格	1370mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419-04, SC-70, 3 PIN
NTS4172N	ONSEMI	获取价格	Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70
NTS4172NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70
NTS4173P	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4173PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70
NTS4401NT1	ONSEMI	获取价格	100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN
NTS4409N	ONSEMI	获取价格	Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT

与NTS4101P_06相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NTS4101P_06

NTS4101P_06 数据手册

与NTS4101P_06相关器件

与NTS4101P_06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTS4101P_06

NTS4101P_06 数据手册

与NTS4101P_06相关器件

与NTS4101P_06相关文章

您还可以找

您在本页遇到什么问题？