是否无铅: | 不含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | SC-70 |
包装说明: | CASE 419-04, SC-70, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.2 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 1.37 A |
最大漏源导通电阻: | 0.12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 85 pF | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTS4101PT1G | ONSEMI |
获取价格 |
Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 | |
NTS4101PT1G | ROCHESTER |
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1370mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419-04, SC-70, 3 PIN | |
NTS4172N | ONSEMI |
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Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70 | |
NTS4172NT1G | ONSEMI |
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Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70 | |
NTS4173P | ONSEMI |
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Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70 | |
NTS4173PT1G | ONSEMI |
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Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70 | |
NTS4401NT1 | ONSEMI |
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100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419-04, SC-70, 3 PIN | |
NTS4409N | ONSEMI |
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Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT | |
NTS4409NT1G | ONSEMI |
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Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT | |
NTS-450 | MEANWELL |
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450W High Reliable True Sine Wave DC-AC Power Inverter |