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NTE5620 PDF预览

NTE5620

更新时间: 2024-11-28 07:14:27
品牌 Logo 应用领域
NTE 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
3页 24K
描述
TRIAC 800VRM, 8A, TO220 Full Pack

NTE5620 技术参数

生命周期:Active零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:2.15外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:75 mA
最大直流栅极触发电压:2 V最大维持电流:50 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:8 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

NTE5620 数据手册

 浏览型号NTE5620的Datasheet PDF文件第2页浏览型号NTE5620的Datasheet PDF文件第3页 
NTE5620  
TRIAC  
800VRM, 8A, TO220 Full Pack  
The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim-  
mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-  
trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting  
state for either polarity of applied voltage with positive or negative gate triggering.  
Features:  
D Blocking Voltage – 800 Volts  
D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability  
D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability  
D Gate Triggering Guaranteed in Four Modes  
Absolute Maximum Ratings:  
Peak Repetitive Off–State Voltage, VDRM  
(TJ = –40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V  
On–State Current RMS, IT(RMS)  
(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A  
Peak Non–Repetitive Surge Current, ITSM  
(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) . . . . . . 100A  
Peak Gate Power (TC = +80°C, Pulse Width = 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W  
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW  
Peak Gate Current (Pulse Width = 2µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A  
RMS Isolation Voltage (TA = +25°C, Relative Humidity 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W  
Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W  
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a  
constant current source for blocking capability such that the voltage applied exceeds the  
rated blocking voltage.  
Note 2. The case temperature reference point for all TC measurements is a point on the center  
lead of the package as close as possible to the plastic body.  

NTE5620 替代型号

型号 品牌 替代类型 描述 数据表
MAC228A10 ONSEMI

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