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NTE5651 PDF预览

NTE5651

更新时间: 2024-09-14 23:54:59
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页数 文件大小 规格书
2页 23K
描述
TRIAC|200V V(DRM)|2.5A I(T)RMS|TO-5

NTE5651 数据手册

 浏览型号NTE5651的Datasheet PDF文件第2页 
NTE5650 thru NTE5653  
TRIAC – 100VRM, 2.5A  
Description:  
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and  
MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed  
in TO–5 outline cans.  
The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–  
state to conduction for either polarity of applied voltage with positive or negative gate–trigger current  
and are designed for control applications in lighting, heating, cooling and static switching relays.  
Absolute Maximum Ratings:  
Repetitive Peak Off–State Voltage (TJ = +90°C, Gate Open, Note 1), VDROM  
NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
RMS On–State Current (TC = +75°C and Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . 3A  
Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A  
Peak Gate–Trigger Current (3µsec, Max.), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Peak Gate–Power Dissipation (IGT IGTM for 3µsec. Max.), PGM . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W  
Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +90°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W  
Note 1. All values apply in either direction.  
Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Peak Off–State Current  
I
T = +90°C, V = Max Rating,  
0.75 mA  
DROM  
J
DROM  
Gate Open, Note 1  
Maximum On–State Voltage  
DC Holding Current  
V
T = +25°C, i = 5A (Peak), Note 1  
3
1.85  
5
V
TM  
C
T
I
T = +25°C, Gate Open  
C
mA  
V/µs  
HO  
Critical Rate–of–Rise of Off–State  
Voltage  
Critical T = +90°C, v = V  
dv/dt  
, Gate Open,  
C
D
DROM  
Note 1  
DC Gate–Trigger Current  
MT (+) Gate (+), MT (–) Gate (–)  
I
GT  
T = + 25°C, v = 6V, R = 39Ω  
3
mA  
2
2
C
D
L
MT (+) Gate (–), MT (–) Gate (+)  
2
2
Note 1. All values apply in either direction.  

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