Datasheet > NTE5699

NTE5699

更新时间： 2024-10-30 07:14:31

品牌	Logo	应用领域
NTE		三端双向交流开关
页数	文件大小	规格书
3页	25K
描述
TRIAC - 800VRM, 25A TO220 Full Pack

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NTE5699 数据手册

NTE5699

TRIAC – 800V_RM, 25A

TO220 Full Pack

Description:

The NTE5699 TRIAC is designed primarily for full–wave AC control applications, such as lighting sys-

tems, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-

trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting

state for either polarity of applied voltage with positive or negative gate triggering.

Features:

D Blocking Voltage – 800 Volts

D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability

D Gate Triggering Guaranteed in Four Modes

Absolute Maximum Ratings:

Peak Repetitive Off–State Voltage, V_DRM

(T_J= –40° to +125°C, 1/2 Sine Wave 50 to 60H_Z, Gate Open, Note 1) . . . . . . . . . . . . . 800V

Peak Gate Voltage (t ≤ 2µs), V_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V

On–State Current RMS, I_T(RMS)

(T_C= +80°C, Full Cycle Sine Wave 50 to 60H_Z, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Peak Non–Repetitive Surge Current, I_TSM

(One Full Cycle, 60Hz, T_C= +125°C, Preceded and followed by rated current) . . . . . . 250A

Peak Gate Power (t ≤ 2µs), P_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Average Gate Power (T_C= +80°C, t ≤ 8.3ms), P_G(AV). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Peak Gate Current (t ≤ 2µs), I_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

RMS Isolation Voltage (T_A= +25°C, Relative Humidity ≤ 20%), V_(ISO). . . . . . . . . . . . . . . . . . . 1500V

Operating Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Thermal Resistance, Junction–to–Case, R_thJC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W

Typical Thermal Resistance, Case–to–Sink, R_thCS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W

Thermal Resistance, Junction–to–Ambient, R_thJA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a

constant current source for blocking capability such that the voltage applied exceeds the

rated blocking voltage.

Note 2. The case temperature reference point for all T_Cmeasurements is a point on the center

lead of the package as close as possible to the plastic body.

12 3

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