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NTE5726 PDF预览

NTE5726

更新时间: 2024-10-29 22:30:23
品牌 Logo 应用领域
NTE 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
3页 34K
描述
Powerblock Module

NTE5726 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X7Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:2.3
Is Samacsys:N外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:200 mA
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:355 A断态重复峰值电压:1600 V
重复峰值反向电压:1600 V表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

NTE5726 数据手册

 浏览型号NTE5726的Datasheet PDF文件第2页浏览型号NTE5726的Datasheet PDF文件第3页 
NTE5726  
Powerblock Module  
Description:  
The NTE5726 uses high voltage power thyristors/diodes and is electrically isolated from the metal  
base, allowing common heatsinks and compact assemblies to be built. This device is intended for  
general purpose applications such as battery chargers, welders and plating equipment and where  
high voltage and high current are required.  
Features:  
D High Voltage  
D Electrically Isolated Base Plate  
D 3000VRMS Isolating Voltage  
D High Surge Capability  
D Large Creepage Distances  
Ratings and Characteristics:  
Average Forward Current (TC = +85°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 160A  
Maximum RMS On–State Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A  
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V  
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V  
Maximum Peak Reverse and Off–State Leakage Current (TJ = +125°C), IRRM, IDRM . . . . . . 50mA  
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V  
Critical Rate of Rise of Off–State Voltage (TJ = +125°C), dv/dt  
(Linear to 80% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs  
(Linear to 67% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Thermal Resistance, Junction–to–Case (Per Junction, DC Operation), RthJC . . . . . . . . . 0.170°C/W  
Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . . 0.05°C/W  
Note 1. Mounting surface flat, smooth and greased.  

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