Datasheet > NTE573

NTE573

更新时间： 2024-09-15 07:14:39

品牌	Logo	应用领域
NTE		/
页数	文件大小	规格书
2页	22K
描述
Schottky Barrier Rectifier

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NTE573 数据手册

NTE573

Schottky Barrier Rectifier

Description:

The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–

of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact.

This device is ideally suited for use in low–voltage, high–frequency inverters, as free wheeling diodes,

and polarity protection diodes.

Features:

D Low Forward Voltage

D Low Power Loss

D High Surge Capacity

D Low Stored Charge Majority Carrier Conduction

D High Efficiency

D High Switching Capability

Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage, V_RRM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Working Peak Reverse Voltage, V_RWM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

DC Blocking Voltage, V_R. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

RMS Reverse Voltage, V_R(RMS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V

Average Forward Rectified Current, I_O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Non–Repetitive Peak Surge Current, I_FSM

(Surge applied at rated load conditions half–wave, single phase, 60Hz, T_L= +70°C) . 250A

Operating Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Electrical Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Instantaneous Forward Voltage

V_F

I_F= 5A

–

0.70

0.95

I_F= 15A

Instantaneous Reverse Current

I_R

V_R= 60V, T_L= +25°C

V_R= 60V, T_L= +100°C

Note 1

–

Junction Capacitance

C_P

380

Note 1. Measured at 1MHz and applied reverse voltage of 4 volts.

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NTE573 替代型号

型号	品牌	替代类型	描述	数据表
SB560	FAIRCHILD	功能相似	Schottky Rectifiers
SB550	FAIRCHILD	功能相似	Schottky Rectifiers
SB540	FAIRCHILD	功能相似	Schottky Rectifiers

与NTE573相关器件

型号	品牌	获取价格	描述	数据表
NTE574	NTE	获取价格	General Purpose Silicon Rectifier Fast Recovery
NTE5740	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE5741	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE5742	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE5743	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE5744	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE5745	NTE	获取价格	Powerblock Modules 3 Phase Bride Modules
NTE575	NTE	获取价格	General Purpose Silicon Rectifier Fast Recovery
NTE576	NTE	获取价格	5.0 Ampere Super Fast Rectifier
NTE577	NTE	获取价格	Silicon Diode General Purpose, Fast Recovery Switch