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NTE5676 PDF预览

NTE5676

更新时间: 2024-11-26 00:01:19
品牌 Logo 应用领域
NTE 栅极触发装置三端双向交流开关
页数 文件大小 规格书
2页 22K
描述
TRIAC - 15 Amp

NTE5676 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:2.16Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:80 mA最大直流栅极触发电压:2.5 V
最大维持电流:60 mAJEDEC-95代码:TO-48
JESD-30 代码:O-MUPM-D2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:15 A
断态重复峰值电压:500 V子类别:TRIACs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

NTE5676 数据手册

 浏览型号NTE5676的Datasheet PDF文件第2页 
NTE5673 thru NTE5677  
TRIAC – 15 Amp  
Description:  
The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors  
which may be switched from off–state to conduction for either polarity od applied voltage with positive  
or negative gate triggering. These devices are designed for control of AC loads in applications such  
as lighting, heating, and motor speed control as well as static switching relays.  
Absolute Maximum Ratings:  
Repetitive Peak Off–State Voltage and peak Reverse Voltage (TJ = +100°C), VDRM, VRRM  
NTE5673 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
NTE5675 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE5676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V  
NTE5677 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
On–State Current RMS (TC = +75°C, 360° Conduction), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 15A  
Peak Surge (Non–Repetitive) On–State Current (One Full Cycle, 50 or 60Hz), ITSM . . . . . . . . 150A  
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W  
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Operating Junction Temperature Range (TJ), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Min Typ Max Unit  
Peak Off–State Current  
(Ir = 100A Peak)  
IDROM  
mA  
2
Maximum On–State Voltage  
(Ir = 100A Peak)  
VT  
V
2.2  
DC Gate Trigger Current  
IGT  
mA  
(Main Terminal Voltage = 24V, RL = 12)  
MT2 (+), G (+); MT2 (–), G (–) Quads I – III  
MT2 (+), G (–); MT2 (–), G (+) Quads II – IV  
50  
80  
DC Gate Trigger Voltage  
VGT  
IH  
V
(Main Terminal Voltage = 24V, RL = 12)  
2.5  
60  
DC Holding Current  
(Gate Open)  
mA  
µs  
Gate Controlled Turn–On Time  
tgt  
(VD = VDROM, IT = 10A Peak, IGT = 300mA, tr = 0.1µs)  
3.0  
40  
5
Critical Rate–of–Rise of Off–State Voltage  
Critical  
dv/dt  
V/µs  
V/µs  
(VD = VDROM, TC = +100°C, Gate Open)  
Critical Rate–of–Rise of Commutation  
Commutating  
dv/dt  
(VD = VDROM, If = IT(RMS), TC = +100°C, Gate Open)  

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