Datasheet > NTE5656

NTE5656

更新时间： 2024-11-25 23:54:59

品牌	Logo	应用领域
其他 - ETC		栅极三端双向交流开关
页数	文件大小	规格书
2页	22K
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NTE5656 数据手册

NTE5655 thru NTE5657

TRIAC – 800mA

Sensitive Gate

Description:

The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed

to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated

chips.

These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduc-

tion for either polarity of applied voltage with positive or negative gate trigger current. They are de-

signed for control applications in lighting, heating, cooling and static switching relays.

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage (Gate Open, T_J= +100°C), V_DRM

NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On–State Current (T_C= +75°C, Conduction Angle of 360°C), I_TRMS. . . . . . . . . . . . . . . 800mA

Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I_TSM. . . . . . . . . . . 8A

Peak Gate–Trigger Current (3µs Max), I_GTM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Peak Gate–Power Dissipation (I_GT≤ I_GTMfor 3µs Max), P_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Average Gate–Power Dissipation, P_G(AV). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW

Operating Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Typical Thermal Resistance, Junction–to–Case, R_thJC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W

Electrical Characteristics: (T_C= +25°C, Maximum Ratings unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Off–State Current

= Max Rating, Gate Open,

–

0.75

–

DRM

T = +100°C

Max. On–State Voltage

i = 800mA (Peak)

–

1.9

–

DC Holding Current

Gate Open

V/µs

Critical Rate–of–Rise of Off–State Voltage

Critical V = V

dv/dt

, Gate Open, T = +100°C

DRM

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与NTE5656相关器件

型号	品牌	获取价格	描述	数据表
NTE5657	NTE	获取价格	TRIAC - 800mA Sensitive Gate
NTE5661	NTE	获取价格	TRIAC, 10 Amp
NTE5671	NTE	获取价格	TRIAC 800VRM, 20A TO220 (Isolated)
NTE5672	ETC	获取价格	TRIAC\|600V V(DRM)\|25A I(T)RMS\|FBASE-R-HW30
NTE5673	NTE	获取价格	TRIAC - 15 Amp
NTE5675	NTE	获取价格	TRIAC - 15 Amp
NTE5676	NTE	获取价格	TRIAC - 15 Amp
NTE5677	NTE	获取价格	TRIAC - 15 Amp
NTE5679	NTE	获取价格	TRIAC - 600V, 40A
NTE5680	NTE	获取价格	TRIAC, 25 Amp