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NTE5646 PDF预览

NTE5646

更新时间: 2024-11-26 04:35:59
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页数 文件大小 规格书
2页 22K
描述
TRIAC - Internally Triggered

NTE5646 技术参数

生命周期:Active零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:2.15Is Samacsys:N
其他特性:MAXIMUM BREAK-OVER VOLTAGE OF THE DIAC IS 40V外壳连接:ISOLATED
配置:SINGLE最大维持电流:60 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:10 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIAC WITH INT TRIGGERBase Number Matches:1

NTE5646 数据手册

 浏览型号NTE5646的Datasheet PDF文件第2页 
NTE5646  
TRIAC – Internally Triggered  
Description:  
The NTE5646 is a TRIAC that includes a diac trigger mounted inside the same package. This device  
saves the user the added expense of buying a discrete diac and the assembling associated with a  
gated triac. This device includes a dial trigger mounted inside the same isolated TO220 type package.  
Absolute Maximum Ratings:  
Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 600V  
RMS On–State Current (TC = +80°C, Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . . . . 10A  
Peak Surge (Non–Repetitive) On–State Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . 100A  
Peak Gate–Trigger Current (3sec Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Typical Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W  
Note 1. All values apply in either direction.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Peak Off–State Current  
IDRM  
Gate Open, TV = +110°C,  
0.5  
mA  
VDRM = 600V, Note 1  
Maximum On–State Voltage  
DC Holding Current  
VTM  
IT = 10A, Note 1  
1.5  
60  
V
IHOLD  
Gate Open, Note 1  
mA  
V/µs  
Critical Rate–of–Rise of  
Off–State Voltage  
Critical  
dv/dt  
VD = 600V, Gate Open,  
TC = +110C, Note 1  
60  
Critical Rate–of–Rise of  
Commutation Voltage  
Commutating TC = +80°C, Gate Unenergized,  
4
3
V/µs  
µs  
dv/dt  
VD = 600V, IT = 10A, Note 1  
Gate–Controlled Turn–On Time  
Tgt  
VD = 600V, tR = 0.1µs,  
IT = 10A (Peak)  
Trigger DIAC Specifications  
Breakover Voltage Symmetry  
V(BO)  
3
V
V
Breakover Voltage  
VBO  
30  
45  
(Forward & Reverse)  
Dynamic Breakback Voltage  
(Forward & Reverse)  
[V ±]  
5
V
Peak Breakover Current  
Trigger Firing Capacitance  
IBO  
C
200  
0.1  
µA  
µF  
Note 1. All values apply in either direction.  

NTE5646 替代型号

型号 品牌 替代类型 描述 数据表
NTE5645 NTE

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