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NTD4865NT4G PDF预览

NTD4865NT4G

更新时间： 2024-11-06 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 100K
描述
Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK

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中文翻译

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NTD4865NT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.29Is Samacsys：N
Base Number Matches：1

NTD4865NT4G 数据手册

 浏览型号NTD4865NT4G的Datasheet PDF文件第2页浏览型号NTD4865NT4G的Datasheet PDF文件第3页浏览型号NTD4865NT4G的Datasheet PDF文件第4页浏览型号NTD4865NT4G的Datasheet PDF文件第5页浏览型号NTD4865NT4G的Datasheet PDF文件第6页浏览型号NTD4865NT4G的Datasheet PDF文件第7页 
NTD4865N  
Power MOSFET  
25 V, 44 A, Single N-Channel, DPAK/IPAK  
Features  
•ꢀTrench Technology  
•ꢀLow R  
to Minimize Conduction Losses  
http://onsemi.com  
DS(on)  
•ꢀLow Capacitance to Minimize Driver Losses  
•ꢀOptimized Gate Charge to Minimize Switching Losses  
•ꢀThese are Pb-Free Devices  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
10.9 mW @ 10 V  
17.2 mW @ 4.5 V  
25 V  
44 A  
Applications  
•ꢀVCORE Applications  
•ꢀDC-DC Converters  
•ꢀHigh/Low Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G
Parameter  
Symbol  
Value  
Unit  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
25  
20  
V
V
A
DSS  
S
V
N-CHANNEL MOSFET  
GS  
Continuous Drain  
Current R  
I
D
T = 25°C  
10.5  
A
4
q
JA  
4
T = 85°C  
A
8.1  
(Note 1)  
Power Dissipation  
(Note 1)  
4
T = 25°C  
A
P
1.92  
W
A
D
D
D
R
q
JA  
2
1
Continuous Drain  
Current R  
I
D
T = 25°C  
A
8.5  
6.6  
1
1
2
3
3
q
JA  
2
T = 85°C  
A
Steady  
State  
3
(Note 2)  
Power Dissipation  
(Note 2)  
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
CASE 369D  
IPAK  
T = 25°C  
A
P
I
1.27  
W
A
R
q
JA  
(Bent Lead)  
STYLE 2  
(Straight Lead  
DPAK)  
Continuous Drain  
Current R  
(Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
44  
34  
D
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Power Dissipation  
(Note 1)  
P
33.3  
W
A
R
q
JC  
4
Drain  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
87  
35  
4
Drain  
4
Drain  
Current Limited by Package  
T = 25°C  
A
I
A
DmaxPkg  
Operating Junction and Storage  
Temperature  
T ,  
J
-55 to  
+175  
°C  
T
STG  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
28  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
2
Drain  
Single Pulse Drain-to-Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
50  
1
2
3
Gate Drain Source  
1
3
Gate Source  
J
DD  
I = 10 A , L = 1.0 mH, R = 25 W)  
GS  
1
2
3
Gate Drain Source  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Y
WW  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4865N = Device Code  
= Pb-Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
April, 2008 - Rev. 1  
1
Publication Order Number:  
NTD4865N/D  
12345678

中文翻译

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NTD4865NT4G 替代型号

型号 品牌 替代类型 描述 数据表
NVD4810NT4G ONSEMI

类似代替

 Single N-Channel Power MOSFET 30V, 54A, 10mΩ
NTD60N02R ONSEMI

类似代替

 Power MOSFET 62 A, 24 V, N−Channel, DPAK
FDD6690A ONSEMI

功能相似

 30V N沟道PowerTrench® MOSFET

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