是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.11 | 雪崩能效等级(Eas): | 60 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (Abs) (ID): | 32 A |
最大漏极电流 (ID): | 32 A | 最大漏源导通电阻: | 0.0105 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 48 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD50N03RT4G | ONSEMI |
类似代替 |
Power MOSFET | |
NTD50N03RG | ONSEMI |
类似代替 |
Power MOSFET | |
NTD60N02RG | ONSEMI |
类似代替 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD60N02R.1 | ONSEMI |
获取价格 |
Power MOSFET 62 A, 25 V, NâChannel, DPAK | |
NTD60N02R.1G | ONSEMI |
获取价格 |
Power MOSFET 62 A, 25 V, NâChannel, DPAK | |
NTD60N02R.35 | ONSEMI |
获取价格 |
Power MOSFET 62 A, 25 V, NâChannel, DPAK | |
NTD60N02R.35G | ONSEMI |
获取价格 |
Power MOSFET 62 A, 25 V, NâChannel, DPAK | |
NTD60N02R-001 | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK | |
NTD60N02R-032 | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK | |
NTD60N02R-032G | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK | |
NTD60N02R1 | ONSEMI |
获取价格 |
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | |
NTD60N02R-1 | ONSEMI |
获取价格 |
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | |
NTD60N02R-1G | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK |