Datasheet > NTB125N02R_06

NTB125N02R_06

更新时间： 2024-11-02 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	85K
描述
Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK

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中文翻译

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数据手册

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NTB125N02R_06 数据手册

NTB125N02R, NTP125N02R

Power MOSFET

125 A, 24 V N−Channel

TO−220, D²PAK

Features

• Planar HD3e Process for Fast Switching Performance

• Body Diode for Low t and Q and Optimized for Synchronous

http://onsemi.com

Operation

125 AMPERES, 24 VOLTS

• Low C to Minimize Driver Loss

iss

R_DS(on)= 3.7 mW (Typ)

• Optimized Q and R

for Shoot−through Protection

DS(on)

• Low Gate Charge

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C Unless otherwise specified)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

1.1

113.6

°C/W

MARKING

DIAGRAMS

Total Power Dissipation @ T = 25°C

Drain Current −

Continuous @ T = 25°C, Chip

125

120.5

Continuous @ T = 25°C, Limited by Package

Continuous @ T = 25°C, Limited by Wires

Single Pulse (t = 10 ms)

250

TO−220AB

CASE 221A

STYLE 5

Thermal Resistance −

Junction−to−Ambient (Note 1)

Total Power Dissipation @ T = 25°C

Drain Current − Continuous @ T = 25°C

125N2RG

AYWW

2.72

18.6

°C/W

Thermal Resistance −

Junction−to−Ambient (Note 2)

Total Power Dissipation @ T = 25°C

Drain Current − Continuous @ T = 25°C

1.98

15.9

°C/W

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

125N2G

AYWW

D PAK

Single Pulse Drain−to−Source Avalanche

120

CASE 418AA

STYLE 2

Energy − Starting T = 25°C

(V = 50 V , V = 10 V , I = 15.5 A ,

L = 1 mH, R = 25 W)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

125N2x = Device Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= R

= Assembly Location

= Year

= Work Week

= Pb−Free Package

1. When surface mounted to an FR4 board using 1 inch pad size,

(Cu Area 1.127 in ).

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in ).

PIN ASSIGNMENT

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

FUNCTION

Gate

Drain

Source

Drain

Publication Order Number:

April, 2006 − Rev. 7

NTB125N02R/D

12 3 4 5 6 7

中文翻译

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与NTB125N02R_06相关器件

型号	品牌	获取价格	描述	数据表
NTB125N02RG	ONSEMI	获取价格	Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
NTB125N02RT4	ONSEMI	获取价格	Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK
NTB125N02RT4G	ONSEMI	获取价格	Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
NTB12N50	ONSEMI	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB12N50	ROCHESTER	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB12N50/D	ETC	获取价格	TMOS 7 E-FET? Power Field Effect Transistor
NTB12N50T4	ONSEMI	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB12N50T4	ROCHESTER	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB13N10	ONSEMI	获取价格	Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK
NTB13N10G	ONSEMI	获取价格	13A, 100V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3

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