Datasheet > NTB12N50/D

NTB12N50/D

更新时间： 2024-11-01 23:54:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	76K
描述
TMOS 7 E-FET? Power Field Effect Transistor

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中文翻译

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NTB12N50/D 数据手册

Preferred Device

N–Channel Enhancement–Mode

Silicon Gate

http://onsemi.com

This advanced TMOS E–FET is designed to withstand high energy

in the avalanche and commutation modes. This new energy efficient

design also offers a drain–to–source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls. These devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

TMOS POWER FET

12 AMPERES

500 VOLTS

= 0.41 Ω

DS(on)

N–Channel

New Features of TMOS 7

• Ultra Low On–Resistance Provides Higher Efficiency

• Reduced Gate Charge

Features Common to TMOS 7 and TMOS E–FETS

• Avalanche Energy Specified

• Diode Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DS(on)

DSS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–Source Voltage

Symbol

Value

Unit

500

Vdc

DSS

DGR

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage

— Continuous

— Non–Repetitive (t

10 ms)

GSM

Drain — Continuous

— Continuous @ 100°C

Adc

D PAK

CASE 418B

STYLE 2

— Single Pulse (t

10 µs)

Total Power Dissipation

Derate above 25°C

202

1.61

Watts

W/°C

PIN ASSIGNMENT

Operating and Storage Temperature

Range

T , T

stg

–55 to

150

°C

Gate

Drain

Single Drain–to–Source Avalanche

720

Energy — Starting T = 25°C

Source

= 100 V, V

= 10 Vdc,

= 12 A, L = 10 mH, R = 25 Ω)

Drain

Thermal Resistance

— Junction–to–Case

°C/W

θJC

θJA

0.62

62.5

— Junction–to–Ambient

(1)

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

Device

NTB12N50

Package

Shipping

50 Units/Rail

(1) When surface mounted to an FR4 board using the minimum recommended

pad size.

D PAK

NTB12N50T4

D PAK

800 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

April, 2000 – Rev. 0

NTB12N50/D

12 3 4

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与NTB12N50/D相关器件

型号	品牌	获取价格	描述	数据表
NTB12N50T4	ONSEMI	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB12N50T4	ROCHESTER	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB13N10	ONSEMI	获取价格	Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK
NTB13N10G	ONSEMI	获取价格	13A, 100V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3
NTB13N10T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 13A I(D) \| TO-263AB
NTB150N65S3HF	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，24
NTB15N40	ONSEMI	获取价格	15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB15N40T4	ONSEMI	获取价格	15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB18N06	ONSEMI	获取价格	Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK
NTB18N06G	ONSEMI	获取价格	Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK

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