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NTB13N10T4 PDF预览

NTB13N10T4

更新时间: 2024-02-29 21:16:02
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
12页 87K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-263AB

NTB13N10T4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LEAD FREE, CASE 418B-04, D2PAK-3
针数:3Reach Compliance Code:unknown
风险等级:5.32雪崩能效等级(Eas):85 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):13 A
最大漏源导通电阻:0.165 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):39 A认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

NTB13N10T4 数据手册

 浏览型号NTB13N10T4的Datasheet PDF文件第2页浏览型号NTB13N10T4的Datasheet PDF文件第3页浏览型号NTB13N10T4的Datasheet PDF文件第4页浏览型号NTB13N10T4的Datasheet PDF文件第5页浏览型号NTB13N10T4的Datasheet PDF文件第6页浏览型号NTB13N10T4的Datasheet PDF文件第7页 
NTB13N10  
Advance Information  
Power MOSFET  
13 Amps, 100 Volts  
N–Channel Enhancement–Mode D2PAK  
Features  
http://onsemi.com  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
Avalanche Energy Specified  
13 AMPERES  
100 VOLTS  
165 mW @ VGS = 10 V  
I  
and R  
Specified at Elevated Temperature  
DSS  
DS(on)  
2
Mounting Information Provided for the D PAK Package  
Typical Applications  
N–Channel  
PWM Motor Controls  
D
Power Supplies  
Converters  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
S
Drain–to–Source Voltage  
V
DSS  
DGR  
Drain–to–Source Voltage (R = 1.0 MW)  
V
V
100  
GS  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Gate–to–Source Voltage  
– Continuous  
V
GS  
"20  
"30  
– Non–Repetitive (t v 10 ms)  
p
GSM  
4
Drain Current  
– Continuous @ T = 25°C  
Adc  
Drain  
I
I
13  
8.0  
39  
A
D
4
– Continuous @ T = 100°C  
A
D
– Pulsed (Note 1)  
I
DM  
1
2
NTB13N10  
LLYWW  
Total Power Dissipation @ T = 25°C  
P
64.7  
0.43  
Watts  
W/°C  
A
D
3
Derate above 25°C  
2
D PAK  
CASE 418B  
STYLE 2  
Operating and Storage Tempera-  
ture Range  
T , T  
–55 to +175  
°C  
J
stg  
2
1
Gate  
3
Single Pulse Drain–to–Source Avalanche  
E
AS  
85  
mJ  
Drain  
Source  
Energy – Starting T = 25°C  
J
(V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
I
= 13 A, L = 1.0 mH, R = 25 W)  
L(pk)  
G
NTB13N10 = Device Code  
Thermal Resistance  
– Junction–to–Case  
°C/W  
°C  
LL  
Y
WW  
= Location Code  
= Year  
= Work Week  
R
2.32  
260  
q
JC  
L
Maximum Lead Temperature for Soldering  
T
Purposes, 1/8from case for 10 seconds  
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2
NTB13N10  
D PAK  
50 Units/Rail  
2
NTB13N10T4  
D PAK  
800/Tape & Reel  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
May, 2002 – Rev. 4  
NTB13N10/D  

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