Datasheet > NTB22N06T4

NTB22N06T4

更新时间： 2024-09-30 23:54:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	77K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 22A I(D) \| TO-263AB

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数据手册

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NTB22N06T4 数据手册

NTP22N06, NTB22N06

Power MOSFET

22 Amps, 60 Volts

N–Channel TO–220 and D²PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

22 AMPERES

60 VOLTS

R_DS(on)= 60 mΩ

N–Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage

Vdc

DSS

Drain–to–Gate Voltage (R = 10 MΩ)

DGR

Gate–to–Source Voltage

– Continuous

"20

"30

– Non–Repetitive (t v10 ms)

Drain Current

– Continuous @ T = 25°C

Adc

Apk

– Continuous @ T = 100°C

– Single Pulse (t v10 µs)

D PAK

TO–220AB

CASE 221A

STYLE 5

Total Power Dissipation @ T = 25°C

0.4

W/°C

CASE 418B

STYLE 2

Derate above 25°C

Operating and Storage Temperature Range

T , T

–55 to

+175

°C

stg

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Single Pulse Drain–to–Source Avalanche

Energy – Starting T = 25°C

(V = 50 Vdc, V = 10 Vdc, L = 1.0 mH,

Drain

= 60 Vdc, I

= 12 A, RG = 25 Ω)

L(pk)

Drain

Thermal Resistance

– Junction–to–Case

°C/W

°C

2.5

62.5

– Junction–to–Ambient

NTx22N06

LLYWW

Maximum Lead Temperature for Soldering

260

NTx22N06

LLYWW

Purposes, 1/8″ from case for 10 seconds

Gate

Source

Drain

Source

NTx22N06 = Device Code

= P or B

Drain

= Location Code

= Year

= Work Week

ORDERING INFORMATION

Device

Package

Shipping

NTP22N06

NTB22N06

NTB22N06T4

TO–220AB

50 Units/Rail

D PAK

800/Tape & Reel

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

August, 2001 – Rev. 1

NTP22N06/D

12 3 4 5 6 7 8

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