Datasheet > NSS12100M3T5G

NSS12100M3T5G

更新时间： 2024-11-21 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	83K
描述
12 V, 1 A, Low VCE(sat) PNP Transistor

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NSS12100M3T5G

12 V, 1 A, Low V_CE(sat)

PNP Transistor

ON Semiconductor's e PowerEdge family of low V

CE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V ) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

CE(sat)

http://onsemi.com

12 VOLTS, 1.0 AMPS

Typical application are DC-DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

PNP LOW V_CE(sat)TRANSISTOR

EQUIVALENT R_DS(on)350 mW

COLLECTOR

BASE

Features

EMITTER

•ꢀHigh Continuous Current Capability (1 A)

•ꢀLow V

(150 mV Typical @ 500 mA)

MARKING

DIAGRAM

CE(sat)

•ꢀSmall Size 1.2 mm x 1.2 mm

•ꢀThis is a Pb-Free Device

Benefits

SOT-723

CASE 631AA

STYLE 1

VE M

•ꢀHigh Specific Current and Power Capability Reduces Required PCB Area

•ꢀReduced Parasitic Losses Increases Battery Life

VE = Specific Device Code

= Date Code

MAXIMUM RATINGS (T = 25°C)

ORDERING INFORMATION

Rating

Symbol

Max

-12

-5.0

Unit

Vdc

Adc

†

Device

NSS12100M3T5G

Package

Shipping

Collector‐Emitter Voltage

Collector‐Base Voltage

Emitter‐Base Voltage

CEO

CBO

EBO

SOT-723

(Pb-Free)

8000/

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Collector Current - Continuous

Collector Current - Peak

-1.0

-3.0

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

September, 2007 - Rev. 0

Publication Order Number:

NSS12100M3/D

12 3 4 5

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与NSS12100M3T5G相关器件

型号	品牌	获取价格	描述	数据表
NSS12100UW3TCG	ONSEMI	获取价格	12 V, 1 A, Low VCE(sat) PNP Transistor
NSS12100XV6T1G	ONSEMI	获取价格	12 V, 1 A, Low VCE(sat) PNP Transistor
NSS12200LT1G	ONSEMI	获取价格	12 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS12200LT1G_09	ONSEMI	获取价格	12 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS12200WT1G	ONSEMI	获取价格	12 V, 3 A, Low VCE(sat) PNP Transistor
NSS12200WT1G_09	ONSEMI	获取价格	12 V, 3 A, Low VCE(sat) PNP Transistor
NSS12201LT1G	Linear	获取价格	36V, 2.6A Monolithic Buck
NSS12201LT1G	ONSEMI	获取价格	12 V, 4.0 A, Low VCE(sat) NPN Transistor
NSS12500UW3T2G	ONSEMI	获取价格	12 V, 8.0 A, Low VCE(sat) PNP Transistor
NSS12500UW3T2G_07	ONSEMI	获取价格	12 V, 8.0 A, Low VCE(sat) PNP Transistor

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