NSR0240P2T5G

更新时间： 2024-11-25 05:54:07

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
3页	103K
描述
Schottky Barrier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSR0240P2T5G 数据手册

NSR0240P2T5G

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage

drop and low leakage current and are used in a wide range of dc−dc

converter, clamping and protection applications in portable devices.

NSR0240P2 in a SOD−923 miniature package enables designers to

meet the challenging task of achieving higher efficiency and meeting

reduced space requirements.

http://onsemi.com

Features

40 V SCHOTTKY

BARRIER DIODE

• Very Low Forward Voltage Drop − 460 mV @ 100 mA

• Low Reverse Current − 0.2 mA @ 25 V VR

• 200 mA of Continuous Forward Current

• Power Dissipation of 240 mW with Minimum Trace

• Very High Switching Speed

CATHODE

ANODE

• Low Capacitance − CT = 7 pF

• This is a Pb−Free Device

MARKING

DIAGRAM

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

SOD−923

CASE 514AB

PLASTIC

= Specific Device Code

= Month Code

= Pb−Free Package

Markets

• Mobile Handsets

• MP3 Players

(Note: Microdot may be in either location)

• Digital Camera and Camcorders

• Notebook PCs & PDAs

• GPS

ORDERING INFORMATION

Device

Package

Shipping†

NSR0240P2T5G SOD−923

2 mm Pitch

8000/Tape & Reel

MAXIMUM RATINGS

Rating

Symbol Value

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Reverse Voltage

200

2.0

Forward Current (DC)

Non−Repetitive Peak Forward Surge Current

FSM

ESD Rating: Human Body Model

Machine Model

ESD

Class 1C

Class A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 1

NSR0240P2/D

12 3

中文翻译

下载PDF

与NSR0240P2T5G相关器件

型号	品牌	获取价格	描述	数据表
NSR0240V2T1G	ONSEMI	获取价格	Schottky Barrier Diode
NSR0240V2T1G_12	ONSEMI	获取价格	Schottky Barrier Diode
NSR0240V2T1G_14	ONSEMI	获取价格	Schottky Barrier Diode
NSR0240V2T5G	ONSEMI	获取价格	Schottky Barrier Diode
NSR02F30MX	ONSEMI	获取价格	Schottky Barrier Diode
NSR02F30MXT5G	ONSEMI	获取价格	Schottky Barrier Diode
NSR02F30NXT5G	ONSEMI	获取价格	Schottky Barrier Diode
NSR02F30NXT5G_10	ONSEMI	获取价格	Schottky Barrier Diode
NSR02L30NXT5G	ONSEMI	获取价格	Schottky Barrier Diode
NSR02L30NXT5G_10	ONSEMI	获取价格	Schottky Barrier Diode