Datasheet > NSR0320MW2T1/D

NSR0320MW2T1/D

更新时间： 2024-11-24 23:54:35

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	35K
描述
NSR0320MW2T1 Data Sheet SOD323

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NSR0320MW2T1/D 数据手册

NSR0320MW2T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current,

handling capability, and low forward voltage performance.

• Low Forward Voltage − 0.24 Volts (Typ) @ I = 10 mAdc

• High Current Capability

http://onsemi.com

• ESD Rating − Human Body Model: CLASS 3B

− Machine Model: C

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

HIGH CURRENT

SCHOTTKY BARRIER DIODE

CATHODE

ANODE

MARKING

DIAGRAM

RD M

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

SOD−323

CASE 477

STYLE 1

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

RD = Specific Device Code

= Date Code

Peak Revese Voltage

Forward Power Dissipation

@ T = 25°C

200

2.0

mW/°C

ORDERING INFORMATION

Derate above 25°C

Device

Package

Shipping†

Forward Current (DC)

Continuous

NSR0320MW2T1 SOD−323 3000/Tape & Reel

NSR0320MW2T3 SOD−323 10,000/Tape & Reel

NSR0320MW2T1G SOD−323 3000/Tape & Reel

NSR0320MW2T3G SOD−323 10,000/Tape & Reel

Forward Current

t = 8.3 ms Half Sinewave

Junction Temperature

125 Max

−55 to +150

°C

Storage Temperature Range

stg

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. 0

NSR0320MW2T1/D

12 3 4

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