5秒后页面跳转
NSR0320XV6T1G PDF预览

NSR0320XV6T1G

更新时间: 2024-11-25 02:53:03
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 43K
描述
Schottky Barrier Diode

NSR0320XV6T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:1.06应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:7.5 A
元件数量:1相数:1
端子数量:6最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:23 V
最大反向电流:50 µA反向测试电压:15 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSR0320XV6T1G 数据手册

 浏览型号NSR0320XV6T1G的Datasheet PDF文件第2页浏览型号NSR0320XV6T1G的Datasheet PDF文件第3页浏览型号NSR0320XV6T1G的Datasheet PDF文件第4页 
NSR15ADXV6T1,  
NSR15ADXV6T5  
Dual RF  
Schottky Diode  
These diodes are designed for analog and digital applications,  
including DC based signal detection and mixing applications.  
http://onsemi.com  
Features  
Low Capacitance (<1.0 pF)  
RF SCHOTTKY  
BARRIER DIODES  
15 VOLTS, 30 mA  
Low V (390 mV Typical @ 1.0 mA)  
F
Low V (1.0 mV Typical @ 1.0 mA)  
FD  
These are Pb−Free Devices  
Benefits  
Reduced Parasitic Losses  
Accurate Signal Measurement  
6
1
5
2
4
3
MAXIMUM RATINGS  
Rating  
Peak Reverse Voltage  
Symbol  
Max  
15  
Unit  
V
V
R
Forward Current  
I
30  
mA  
°C  
F
Operating and Storage  
Temperature Range  
T , T  
−65 to  
+150  
MARKING  
DIAGRAM  
J
stg  
6
ESD Rating:  
Class 1 per Human Body Model  
Class A per Machine Model  
1
5RD  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SOT−563  
CASE 463A  
5R = Specific Device Code  
= Date Code  
D
ORDERING INFORMATION  
Device  
Package  
Shipping  
NSR15ADXV6T1 SOT−563  
4 mm pitch  
4000 / Tape & Reel  
NSR15ADXV6T5 SOT−563  
2 mm pitch  
8000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 3  
NSR15ADXV6T1/D  

NSR0320XV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSR0320XV6T1 ONSEMI

完全替代

Schottky Barrier Diode
NSR0320XV6T5G ONSEMI

类似代替

Schottky Barrier Diode
BAT960 NXP

功能相似

Schottky barrier diode

与NSR0320XV6T1G相关器件

型号 品牌 获取价格 描述 数据表
NSR0320XV6T5 ONSEMI

获取价格

Schottky Barrier Diode
NSR0320XV6T5G ONSEMI

获取价格

Schottky Barrier Diode
NSR0320XV6TD ONSEMI

获取价格

Schottky Barrier Diode
NSR0340HT1G ONSEMI

获取价格

Schottky Barrier Diode
NSR0340P2T5G ONSEMI

获取价格

Schottky Barrier Diode
NSR0340V2 ONSEMI

获取价格

Schottky Barrier Diode
NSR0340V2T1G ONSEMI

获取价格

Schottky Barrier Diode
NSR0340V2T5G ONSEMI

获取价格

Schottky Barrier Diode
NSR040A0X_11 LINEAGEPOWER

获取价格

Naos Raptor 40A Non-Isolated Power Modules
NSR040A0X43Z LINEAGEPOWER

获取价格

5 - 13.8Vdc input; 0.6Vdc to 5.0Vdc Output; 40A output current