Datasheet > NSR0320XV6TD

NSR0320XV6TD

更新时间： 2024-02-05 08:07:28

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
4页	32K
描述
Schottky Barrier Diode

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中文翻译

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NSR0320XV6TD 数据手册

NSR0320XV6T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high current,

handling capability, and low forward voltage performance.

• Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc

• High Current Capability

http://onsemi.com

HIGH CURRENT

SCHOTTKY BARRIER DIODE

1, 2, 5, 6

3, 4

CATHODE

ANODE

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Forward Power Dissipation

Symbol

Value

Unit

SOT−563

CASE 463A

STYLE 5

RD D

@ T = 25°C

200

2.0

mW/°C

Derate above 25°C

Forward Current (DC)

Continuous

RD = Specific Device Code

= Date Code

Forward Current

t = 8.3 ms Half Sinewave;

JEDEC Method

7.5

ORDERING INFORMATION

Junction Temperature

125 Max

°C

†

Device

Package

Shipping

Storage Temperature Range

stg

−55 to +150

NSR0320XV6T1

SOT−563

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 3

NSR0320XV6T1/D

12 3 4

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