5秒后页面跳转
NSR05F40NXT5G PDF预览

NSR05F40NXT5G

更新时间: 2024-09-25 05:54:07
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 88K
描述
Schottky Barrier Diode

NSR05F40NXT5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PBCC-N2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.52
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
最小击穿电压:40 V配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.46 VJESD-30 代码:R-PBCC-N2
JESD-609代码:e4湿度敏感等级:1
最大非重复峰值正向电流:10 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
最大功率耗散:1.3 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向电流:75 µA
反向测试电压:40 V表面贴装:YES
技术:SCHOTTKY端子面层:NICKEL PALLADIUM GOLD
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

NSR05F40NXT5G 数据手册

 浏览型号NSR05F40NXT5G的Datasheet PDF文件第2页浏览型号NSR05F40NXT5G的Datasheet PDF文件第3页浏览型号NSR05F40NXT5G的Datasheet PDF文件第4页 
NSR05F40NXT5G  
Schottky Barrier Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current and are offered in a Chip Scale  
Package (CSP) to reduce board space. The low thermal resistance  
enables designers to meet the challenging task of achieving higher  
efficiency and meeting reduced space requirements.  
http://onsemi.com  
Features  
40 V SCHOTTKY  
BARRIER DIODE  
Low Forward Voltage Drop 420 mV @ 500 mA  
Low Reverse Current 15 mA @ 10 V VR  
500 mA of Continuous Forward Current  
ESD Rating Human Body Model: Class 3B  
ESD Rating Machine Model: Class C  
High Switching Speed  
1
2
CATHODE  
ANODE  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
2
MARKING  
DIAGRAM  
Typical Applications  
PIN 1  
1
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping and Protection  
DSN2  
(0402)  
05F40  
YYY  
CASE 152AC  
05F40 = Specific Device Code  
YYY = Year Code  
Markets  
Mobile Handsets  
MP3 Players  
Digital Camera and Camcorders  
Notebook PCs & PDAs  
GPS  
ORDERING INFORMATION  
Device  
NSR05F40NXT5G  
Package  
Shipping†  
5000 / Tape & Reel  
DSN2  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
40  
Unit  
V
Reverse Voltage  
V
R
Forward Current (DC)  
Forward Surge Current  
I
500  
mA  
A
F
I
FSM  
(60 Hz @ 1 cycle)  
10  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
> 8  
> 400  
kV  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 Rev. 2  
NSR05F40/D  

与NSR05F40NXT5G相关器件

型号 品牌 获取价格 描述 数据表
NSR05F40QNXT5G ONSEMI

获取价格

RECTIFIER DIODE,SCHOTTKY,40V V(RRM),SMT
NSR-05P2-32E1-180 MOLEX

获取价格

Board Connector, 5 Contact(s), 1 Row(s), Male, 0.025 inch Pitch, Crimp Terminal, Guide Slo
NSR05T304MX2T5G ONSEMI

获取价格

500 mA, 30 V Schottky Barrier Diode
NSR05T304MXT5G ONSEMI

获取价格

肖特基势垒整流器,500 mA,30 V
NSR05T30P2 ONSEMI

获取价格

500 mA, 30V Schottky Barrier Diode
NSR05T30P2T5G ONSEMI

获取价格

500 mA, 30V Schottky Barrier Diode
NSR05T30XV2T5G ONSEMI

获取价格

肖特基势垒整流器,500 mA,40 V
NSR05T404MX2T5G ONSEMI

获取价格

肖特基势垒二极管,500 mA,40 V
NSR05T40P2 ONSEMI

获取价格

500 mA, 40 V Schottky Barrier Diode
NSR05T40P2_16 ONSEMI

获取价格

500 mA, 40 V Schottky Barrier Diode